Datasets / Graphene Field Effect Transistors for Radiation Detection Project

Graphene Field Effect Transistors for Radiation Detection Project

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Published By National Aeronautics and Space Administration

Issued over 9 years ago

US
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Summary

Type of release
a one-off release of a single dataset

Data Licence
Not Applicable

Content Licence
Creative Commons CCZero

Verification
automatically awarded

Description

<p>The device consists of a graphene piece deposited on a Si substrate with certain thickness of insulation layer. In our initial experiment, constant radiation was applied above the GFET and device conductance was measured before and after the radiation. We observed an increase of the device mobility (transconductance) after the radiation. This demonstration showed that graphene is radiation hard and its conductance changes with radiation. With the IRAD fund, we will continue exploring sensing mechanisms in GFETs and identify optimal absorber substrates and device geometries to improve radiation detection speed, sensitivity, and energy resolution of our GFET-RS devices.</p>

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