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Graphene Field Effect Transistors for Radiation Detection Project

Summary

Type of release
a one-off release of a single dataset

Data Licence
Not Applicable

Content Licence
Creative Commons CCZero

Verification
automatically awarded

Release Date
9 April 2015
Modified Date
8 July 2015
Publishers
National Aeronautics and Space Administration
Keywords
completed, goddard-space-flight-center, project
Identifier
graphene-field-effect-transistors-for-radiation-detection-project
Landing Page
http://techport.nasa.gov/view/11816
Maintainers
John Falker jfalker@nasa.gov
Language
en-US

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Description

<p>The device consists of a graphene piece deposited on a Si substrate with certain thickness of insulation layer. In our initial experiment, constant radiation was applied above the GFET and device conductance was measured before and after the radiation. We observed an increase of the device mobility (transconductance) after the radiation. This demonstration showed that graphene is radiation hard and its conductance changes with radiation. With the IRAD fund, we will continue exploring sensing mechanisms in GFETs and identify optimal absorber substrates and device geometries to improve radiation detection speed, sensitivity, and energy resolution of our GFET-RS devices.</p>

General Information

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