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Space Qualified, Radiation Hardened, Dense Monolithic Flash Memory Project

Summary

Type of release
a one-off release of a single dataset

Data Licence
Not Applicable

Content Licence
Creative Commons CCZero

Verification
automatically awarded

Release Date
9 April 2015
Modified Date
8 July 2015
Publishers
National Aeronautics and Space Administration
Keywords
completed, goddard-space-flight-center, project
Identifier
space-qualified-radiation-hardened-dense-monolithic-flash-memory-project-0fe80
Landing Page
http://techport.nasa.gov/view/8820
Maintainers
Gary Jahns gary.c.jahns@nasa.gov
Language
en-US

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Description

Space Micro proposes to build a radiation hardened by design (RHBD) flash memory, using a modified version of our RH-eDRAM Memory Controller to solve all the single event effects issues (SEU, SEFI and multiple bit errors) using either a RHBD process with NAND Flash cells. The RH-eFlash will be manufactured on known radiation characterized ASIC processes: examples being 130 nm or 65 nm TSMC or other US foundry equivalents. Using the TSMC example, the resulting RH-eFlash, fabricated on a 65 nm process, provides 512 Mbit to 1 Gbit of radiation hardened (SEU, SEFI, SEL and TID) NAND Flash memory. Operating temperature and packaging reliability is addressed through a thorough memory integrated circuit design (temperature) and post IC high-reliability package selections (i.e. ceramic packages). Note that this technology is portable to future available and radiation tested ASIC processes with even finer geometries and high density.

General Information

Legal Information

This dataset has been created by US Government which means it is required to be in the public domain. However US copyright law only allows open access by US citizens, we have assumed the data is equivalently licensed as CC0 for the rest of the world as this is in the spirit of the US Government’s Open Data policy.

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Technical Information

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